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MySpace reportedly loses 50 million songs uploaded over 12 years

first_img Now playing: Watch this: 5:30 Internet Services Music MySpace may have lost 12 years of music in a “server migration project.” Lionel Bonaventure / AFP/Getty Images MySpace may have lost your digital memories in a server migration.”As a result of a server migration project, any photos, videos, and audio files you uploaded more than three years ago may no longer be available on or from Myspace,” it said in a note at the top of the site.”We apologize for the inconvenience. If you would like more information, please contact our Data Protection Officer at DPO@myspace.com.” Tags 5center_img Comments Share your voice Andy Baio, one of the people behind Kickstarter, tweeted that it could mean millions of songs uploaded between the site’s Aug. 1, 2003 launch and 2015 are gone for good.”Myspace accidentally lost all the music uploaded from its first 12 years in a server migration, losing over 50 million songs from 14 million artists,” he wrote Sunday.”I’m deeply skeptical this was an accident. Flagrant incompetence may be bad PR, but it still sounds better than ‘we can’t be bothered with the effort and cost of migrating and hosting 50 million old MP3s,’ ” Baio noted.MySpace didn’t immediately respond to a request for further comment.It might seem like a dim and distant memory now, but MySpace was an essential springboard for musicians like Arctic Monkeys in 2005 and the most popular site in the US in 2006. It was got a makeover back in 2013, when it was refurbished and rebranded as a cool place to share music and video.First published at 5:07 a.m. PT.Updated at 9:44 a.m. PT: Adds background detail. MySpace is still alive but it’s nothing like it was 15…last_img read more

New magnetoresistance effect leads to fourstate memory device

first_img The researchers, Can Onur Avci et al., at MIT and ETH Zürich, have published a paper on the new memory concept in a recent issue of Applied Physics Letters.”With some device and structural optimization, the bit density of existing random access memory devices may be increased by several factors, with the possibility of all-electrical operation,” Avci told Phys.org.Magnetoresistance effects date back to around 1850, when Lord Kelvin demonstrated that applying a magnetic field to a metal object increases the object’s electric resistance in one direction and decreases it in the perpendicular direction. Since then, several other types of magnetoresistance have been discovered. Most notably, Albert Fert and Peter Grünberg won the 2007 Nobel Prize in Physics for their discovery of giant magnetoresistance, which is used to make magnetic field sensors that are found in many of the hard disk drives in today’s computers.In 2015, scientists discovered the newest magnetoresistance effect, called unidirectional spin Hall magnetoresistance. This effect differs from other kinds of magnetoresistance in that the change in resistance depends on the direction of either the magnetization or the electric current. As the scientists explain, this direction-dependent effect occurs because the spin-polarized electrons created by the spin Hall effect in a nonmagnetic layer are deflected in opposite directions by the magnetization of the adjacent magnetic layer. Previously, this new effect was demonstrated in two-layer structures consisting of a nonmagnetic and a magnetic layer. But by adding another magnetic layer, the researchers achieved a great potential advantage for memories: the ability to distinguish between not just two, but four magnetic states. Other types of magnetoresistance effects are only sensitive to the relative orientation of the magnetizations (parallel or antiparallel), although it’s possible to have four distinct magnetic states. Because the new effect is sensitive to the magnetization direction of individual layers, it can distinguish between all four states.The researchers then demonstrated four distinct resistance levels corresponding to the four different magnetic states in their three-layer device. They showed that the four resistance levels can be read out by a simple electric measurement, paving the way for the development of an all-electrical multi-bit-per-cell memory device.The researchers expect that it will be possible to scale up this memory device to higher bit densities by adding more layers, which could realistically enable eight different magnetization states, each with its own unique resistance level. In the future, the researchers also plan to look for materials that exhibit a larger unidirectional spin Hall magnetoresistance effect, which would further enhance the performance of these memory devices. (Left) With a single ferromagnetic layer, the system has two resistance levels. (Right) Adding another ferromagnet to the system creates four levels of resistance, corresponding to the four different magnetic states indicated by the arrows. Credit: Avci et al. ©2017 American Institute of Physics (Phys.org)—In 2015, scientists discovered a new magnetoresistance effect—that is, a new way in which magnetization affects a material’s electric resistance—but hadn’t yet found a promising application for the discovery, beyond the existing technologies. Now in a new paper, the same researchers have demonstrated that the effect can be used to design memories with four distinct stable magnetic states, allowing the memories to store four bits of information in a single magnetic structure. More information: Can Onur Avci et al. “A multi-state memory device based on the unidirectional spin Hall magnetoresistance.” Applied Physics Letters. DOI: 10.1063/1.4983784ABSTRACTWe report on a memory device concept based on the recently discovered unidirectional spin Hall magnetoresistance (USMR), which can store multiple bits of information in a single ferromagnetic heterostructure. We show that the USMR with possible contribution of Joule heating-driven magnetothermal effects in ferromagnet/normal metal/ferromagnet (FM/NM/FM) trilayers gives rise to four different 2nd harmonic resistance levels corresponding to four magnetization states (⇉⇉, ⇄⇄, ⇆⇆, ⇇⇇) in which the system can be found. Combined with the possibility of controlling the individual FMs by spin-orbit torques, we propose that it is possible to build an all-electrical lateral two-terminal multi-bit-per-cell memory device. © 2017 Phys.org Smart multi-layered magnetic material acts as an electric switchcenter_img Journal information: Applied Physics Letters Citation: New magnetoresistance effect leads to four-state memory device (2017, June 5) retrieved 18 August 2019 from https://phys.org/news/2017-06-magnetoresistance-effect-four-state-memory-device.html Explore further This document is subject to copyright. Apart from any fair dealing for the purpose of private study or research, no part may be reproduced without the written permission. The content is provided for information purposes only.last_img read more

Intrepid to donate 10 of bookings launches agent fam contest

first_img Tuesday, November 29, 2016 Posted by Michael Smith TORONTO — In celebration of Giving Tuesday today, Intrepid Travel is donating 10% of all tour bookings to help aid four community projects around the world. Running through Dec. 20, the campaign applies to bookings on over 1,000 of the company’s small-group tours.According to the company, this is the first time it has taken this type of philanthropic approach to discounting, a concept that aligns with the brand’s mission to help consumers see the world through “real, immersive experiences while leaving the destinations they visit in a better position than it was found.”The four projects are currently supported through Intrepid Group’s not-for-profit, ‘The Intrepid Foundation’, and represent a mix of initiatives that the foundation supports through over 50 projects around the world.The projects that will benefit from the campaign include: Kusimayo (Peru), which works to improve the living conditions of children and adults affected by poverty in Puno; Blue Dragon (Vietnam), which provides vocational training and educational support to the impoverished; Pollinate Energy (India), a social enterprise that provides access to sustainable and affordable energy for India’s urban poor; and Friends of the Asian Elephant (Thailand), the FAE hospital that helps rehabilitate elephants once used in tourism entertainment venues.“The holiday season is a time of reflection and giving back,” said Leigh Barnes, North America Director for Intrepid Travel. “While we remain committed to supporting local communities throughout the year, this campaign allows our travellers to help create meaningful impact in the destinations we visit.”Globally recognized as a leader in responsible travel, Intrepid has been carbon-neutral since 2010 and has donated over $5 million through its foundation since 2002. Intrepid Travel hopes to donate $150,000 through the Travel for Good campaign, making it the largest fundraising initiative for The Intrepid Foundation in North America.Canadian agents can experience an Intrepid tour first-hand and win a spot on an upcoming fam. To find out more details, watch Travelweek’s latest video with Leigh Barnes.For more information on Intrepid Travel and the Travel for Good campaign, please visit: intrepidtravel.com/us/travel-for-good. Tags: Intrepid Travelcenter_img Intrepid to donate 10% of bookings, launches agent fam contest Share << Previous PostNext Post >>last_img read more